GC9001 C gc9011 microsemi microwave products 75 technology drive, lowell, ma. 01851, 978-442-5600, fax: 978-937-3748 page 1 tm ? www. microsemi .com copyright ? 2007 rev: 2009-01-19 rohs com p liant passive devices C spiral bias elements descri pt i on the gc9000 series of spiral bias el ement chips are photolithographically fabricated planar spiral conductors supported on a high quality fused quartz substrate. these devices are designed to meet hybrid microwave circuit requirements for dc power injection through ku (or j) band. the actual spiral bias element, consists of a 5 micron, nominal, thick plated gold spiral trace with a 3 mil diameter bonding pad at either end. a dense passivation is applied on the conductive portion of the spiral geometry so that undesirable environmental or particulate effects during operation can be prevented. the bonding pads are left exposed to provide easy, low resistance lead attachment. fused quartz substrates are used to minimize dielectric losses, near zero t ce and provide durability during handling and assembly. contemporary fabrication processes combined with microsemi lowells extensive experience in microwave component and hybrid circuit engineering has generated a product that will be both operationally predictable and reliable when used as a means to supply dc to a small signal hybrid microwave circuit. this series of devices meets rohs requirements per eu directive 2002/95/ec. the standard terminal finish is gold unless otherwise specified. consult the factory if you have special requirements. appli cat i on s bias injection into oscillators, amplifiers and microwave switches (bias tees). can be used to bias tuning varactor diodes, pin diodes, transistors and monolithic circuit components. these spiral elements provide extreme freedom from in band resonance; very smooth wide frequency response. absolu t e m ax i m u m rat i n gs at 2 5 o c (u n less ot h erwi se speci fi ed) rating symbol value unit working current i 250 ma storage temperature t stg -65 to +200 oc operating temperature t op -55 to +150 oc important: for the most current data, consult our website : www.microsemi.com specifications are subject to change, consult factory for the latest information. these devices are esd sensitive and mu st be handled using esd precautions. 1 these devices are supplied with gold terminations suitable for wire-bonding. k ey feat u res ? dimensional uniformity ? planar design ? passivated spiral element ? physical and dimensional stability through temp cycle and vibration ? models as a lossy transmission line ? eliminates potting or coating wire- wound coils ? designed for microwave applications from 2 to 18 ghz ? reduced assembly costs ? rohs compliant 1 appli cat i on s/ben efi t s ? rf bias networks ? wideband performance downloaded from: http:///
GC9001 C gc9011 microsemi microwave products 75 technology drive, lowell, ma. 01851, 978-442-5600, fax: 978-937-3748 page 2 tm ? www. microsemi .com copyright ? 2007 rev: 2009-01-19 rohs com p liant passive devices C spiral bias elements . elect ri cal param et ers @ 2 5 ? c (unle ss ot he rw ise spe c ifie d) model number l(nh) (typ) r dc (ohms) (typ) outline gc9005 3 1.0 a GC9001 6 1.5 a gc9006 10 2.0 b gc9002 15 2.5 b gc9007 21 3.5 c gc9008 28 4.0 c gc9003 36 5.0 c gc9009 45 6.0 d gc9010 55 7.0 d gc9011 68 8.0 d gc9004 78 8.5 d m ech an i cal di m en si on s outline chip l(a) x w(b) (inches) (max) chip thickness(c) (inches) (+/-0.002) a 0.031 x 0.031" 0.011 b 0.032 x 0.032" 0.011 c 0.041 x 0.041" 0.011 d 0.061 x 0.061" 0.011 . GC9001 C gc9011 recommended chip attachment and lead bonding procedures chip attachment chip attachment to hybrid circuits or module bodies can be accomplished with either conductive or nonconductive epoxy paste. epo tek h-61 or epo tek h-20 are examples of some commonly used epoxy pastes ribbon or wire bonding thermo-compression bonding is recommended. a temperature of 175c with pressure of 25 grams would be adequate for bonding most gold ribbon or wire. for optimum performance, attach rf input to pad at center of coil a nd the bypass network (capacitance) to outside pad. downloaded from: http:///
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